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PD-95660
IRL3302PBF
l l l l l l
Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150C Operating Temperature Fast Switching Lead-Free
HEXFET(R) Power MOSFET
D
VDSS = 20V RDS(on) = 0.020
G S
Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
ID = 39A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
39 25 160 57 0.45 10 14 130 23 5.7 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
2.2 62
Units
C/W
7/30/04
IRL3302PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 20 0.70 21
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.023 VGS = 4.5V, ID = 23A 0.020 VGS = 7.0V, ID = 23A V VDS = VGS , ID = 250A S VDS = 10V, ID = 23A 25 VDS = 20V, V GS = 0V A 250 VDS = 10V, V GS = 0V, TJ = 150C 100 VGS = 10V nA -100 VGS = -10V 31 ID = 23A 5.7 nC VDS = 16V 13 VGS = 4.5V, See Fig. 6 VDD = 10V ID = 23A ns RG = 9.5, VGS = 4.5V RD = 2.4, Between lead, 4.5 6mm (0.25in.) nH G from package 7.5 and center of die contact 1300 VGS = 0V 520 pF VDS = 15V 190 = 1.0MHz, See Fig. 5
Typ. 0.022 7.2 110 41 89
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 39 showing the A G integral reverse 160 S p-n junction diode. 1.3 V TJ = 25C, IS = 23A, VGS = 0V 62 94 ns TJ = 25C, IF = 23A 110 160 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature.
ISD 23A, di/dt 97A/s, VDD V(BR)DSS,
TJ 150C
Starting TJ = 25C, L = 0.49mH
RG = 25, IAS = 23A.
Pulse width 300s; duty cycle 2%.
IRL3302PBF
1000
TOP TOP VGS VGS 15V 10V 12V 8.0V 10V 6.0V 8.0V 4.0V 6.0V 4.0V 3.0V BOTTOM3.0V 2.5V BOTTOM 2.5V
1000
TOP TOP
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS VGS 15V 10V 12V 8.0V 10V 6.0V 8.0V 6.0V 4.0V 4.0V 3.0V BOTTOM3.0V 2.5V BOTTOM 2.5V
100
2.5V
10 0.1
2.5V
20s PULSE WIDTH TJ = 25 C
10 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 39A
I D , Drain-to-Source Current (A)
1.5
TJ = 150 C
1.0
10
0.5
1 2 3 4 5
V DS = 15V 20s PULSE WIDTH 6 7 8
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL3302PBF
2400
2000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
15
ID = 23A VDS = 16V
12
C, Capacitance (pF)
1600
Ciss
1200
9
6
800
Coss
400
3
Crss
0 1 10 100
0 0 10 20 30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
TJ = 150 C
I D , Drain Current (A)
10us
100 100us
10
10
1ms 10ms
TJ = 25 C
1 0.5
V GS = 0 V
1.0 1.5 2.0
1
TC = 25 C TJ = 150 C Single Pulse
1 10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL3302PBF
40
300
EAS , Single Pulse Avalanche Energy (mJ)
TOP
250
I D , Drain Current (A)
30
BOTTOM
ID 10A 15A 23A
200
20
150
100
10
50
0 25 50 75 100 125 150
0 25 50 75 100 125 150
TC , Case Temperature ( C)
Starting TJ , Junction Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy Vs. Drain Current
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3302PBF
R DS (on), Drain-to-Source On Resistance ) (
VGS = 4.5V
0.021
RDS(on), Drain-to-Source On Resistance ( )
0.022
0.020
0.019
0.020
0.018
0.019
0.017
0.018
0.016
VGS = 7.0V
0.017
I D = 39A
0.015
0.016 0 10 20 30 40
0.014 4 5 6 7 8 9 10
A
I D , Drain Current (A)
V GS , Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3302PBF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 10.29 (.405) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
2.87 (.113) 2.62 (.103)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
4 15.24 (.600) 14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- EMITTER 3- SOURCE 4 - DRAIN
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E RNAT IONAL RE CT IF IE R L OGO AS S E MB L Y L OT CODE PART NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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